• DocumentCode
    887969
  • Title

    A 3-D Miniaturization Method for Low-Impedance Designs

  • Author

    Banerjee, S. Riki ; Zheng, Chenglin ; Drayton, Rhonda Franklin

  • Author_Institution
    3M Corp., St. Paul
  • Volume
    30
  • Issue
    2
  • fYear
    2007
  • fDate
    5/1/2007 12:00:00 AM
  • Firstpage
    200
  • Lastpage
    208
  • Abstract
    Microstrip interconnects with a V conductor are designed, fabricated, and measured to provide a compact solution for designs requiring low characteristic impedance lines. S-parameter curves are shown up to 35 GHz for 0.5-cm-long lines. The 308-mum-deep V structure produces a 33.8-Omega line with strong standing waves and reflections under 5 dB. To further reduce the impedance, a partial shield is added that results in 6.7 times reduction of signal line width, near elimination of open-end effect, and excellent correlation with a standard 15-Omega microstrip up to 25 GHz. A filter demonstration shows near ideal behavior in the 3 dB response and low return loss when compared to a similar conventional design.
  • Keywords
    S-parameters; microstrip discontinuities; microstrip filters; 3-D miniaturization method; S-parameter curves; V conductor; low-impedance design; microstrip discontinuities; microstrip interconnects; partial shield; stepped impedance filters; Capacitors; Conductors; Design methodology; Dielectric substrates; Impedance; Inductors; Integrated circuit interconnections; Microstrip components; Microstrip filters; Packaging; Filters; microstrip; microstrip discontinuities; stepped impedance filters;
  • fLanguage
    English
  • Journal_Title
    Advanced Packaging, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1521-3323
  • Type

    jour

  • DOI
    10.1109/TADVP.2007.895608
  • Filename
    4214893