DocumentCode :
888106
Title :
A high-performance all-enhancement NMOS operational amplifier
Author :
Young, Ian A.
Volume :
14
Issue :
6
fYear :
1979
Firstpage :
1070
Lastpage :
1077
Abstract :
An NMOS operational amplifier has been designed and fabricated using only enhancement mode MOSFETs in a circuit that employs a novel feedforward compensation scheme. Specifications achieved include high open loop gain (2200), low-power (15 mW or less depending on the load), fast settling time (0.1 percent settling time in 3 /spl mu/s for a 4 V input step and a 10 pF load), and small area. While this amplifier uses only a small number of transistors, its performance is comparable to that of recent depletion load amplifiers. Fewer critical steps are needed to fabricate this amplifier, making it attractive for large analog/digital LSI circuits.
Keywords :
Field effect integrated circuits; Linear integrated circuits; Operational amplifiers; field effect integrated circuits; linear integrated circuits; operational amplifiers; CMOS technology; Charge coupled devices; Cost function; Inverters; Large scale integration; MOS devices; MOSFET circuits; Operational amplifiers; Threshold voltage; Transversal filters;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/JSSC.1979.1051317
Filename :
1051317
Link To Document :
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