Generalised method for extraction of MOSFET source-drain series resistance against temperature

A method for the extraction of the source-drain series resistance in an Si MOS transistor applicable from liquid helium up to room temperature is proposed. The method relies on the use of a generalised MOSFET parameter extraction function Y(V_g)=(I_d²/g_m)¹n/ where the exponent n varies between 2 and 3 as the temperature is lowered from 300 to 4.2 K. The source-drain series resistance is obtained for each temperature from the plot of the extrinsic mobility attenuation factor (to the power n-1) as a function of the slope (to the power n) of the Y(V_g) characteristics measured for MOSFETs having various gate lengths.