• DocumentCode
    888133
  • Title

    New etchant for crystallographic defect studies in thin SOI materials (<1000 AA)

  • Author

    Giles, L.F. ; Nejim, Ahmed ; Hemment, P.L.F.

  • Author_Institution
    Surrey Univ., Guildford, UK
  • Volume
    29
  • Issue
    9
  • fYear
    1993
  • fDate
    4/29/1993 12:00:00 AM
  • Firstpage
    788
  • Lastpage
    789
  • Abstract
    A new etchant has been developed to delineate crystallographic defects in thin silicon films (<1000 AA). The new etchant is based on the HF:HNO3:H2O system with the addition of potassium dichromate and copper nitrate salts. Analyses by plan view TEM have confirmed that silicon films as thin as 500 AA can be analysed using this new etch.
  • Keywords
    SIMOX; dislocation etching; etching; semiconductor thin films; silicon; stacking faults; transmission electron microscope examination of materials; 500 to 1000 AA; Cu(NO 3) 2; HF-HNO 3-H 2O; K 2Cr 2O 7; SIMOX substrates; Si; Si-SiO 2; crystallographic defect; etch pit density; etchant; plan view TEM; stacking faults; thin SOI materials; threading dislocations;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19930527
  • Filename
    211270
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=888133