Title :
New etchant for crystallographic defect studies in thin SOI materials (<1000 AA)
Author :
Giles, L.F. ; Nejim, Ahmed ; Hemment, P.L.F.
Author_Institution :
Surrey Univ., Guildford, UK
fDate :
4/29/1993 12:00:00 AM
Abstract :
A new etchant has been developed to delineate crystallographic defects in thin silicon films (<1000 AA). The new etchant is based on the HF:HNO3:H2O system with the addition of potassium dichromate and copper nitrate salts. Analyses by plan view TEM have confirmed that silicon films as thin as 500 AA can be analysed using this new etch.
Keywords :
SIMOX; dislocation etching; etching; semiconductor thin films; silicon; stacking faults; transmission electron microscope examination of materials; 500 to 1000 AA; Cu(NO 3) 2; HF-HNO 3-H 2O; K 2Cr 2O 7; SIMOX substrates; Si; Si-SiO 2; crystallographic defect; etch pit density; etchant; plan view TEM; stacking faults; thin SOI materials; threading dislocations;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19930527
