Title :
Porous silicon photoluminescence: type II-like recombination mechanism
Author :
Sacilotti, M. ; Abraham, Pierre ; Champagnon, B. ; Monteil, Y. ; Bouix, J.
Author_Institution :
Lyon Univ., Villeurbanne, France
fDate :
4/29/1993 12:00:00 AM
Abstract :
The Letter proposes a model to explain the PL mechanism in porous silicon. It was inspired by type II semiconductor interface PL behaviour. In this model, the PS radiative recombinations involve energy levels in the silicon oxide layer. This model takes into account quantum confinement and the energy threshold above which PS PL is observed.
Keywords :
electron-hole recombination; elemental semiconductors; interface electron states; luminescence of inorganic solids; photoluminescence; porous materials; silicon; Si-SiO 2; energy levels; energy threshold; interface states; like recombination mechanism; model; porous Si photoluminescence; quantum confinement; radiative recombinations; type II;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19930528
