• DocumentCode
    888263
  • Title

    The bias and gain stabilized integrated linear IGFET circuit

  • Author

    Hayashi, Yasuhiro ; Tarui, Yoichiro

  • Volume
    55
  • Issue
    3
  • fYear
    1967
  • fDate
    3/1/1967 12:00:00 AM
  • Firstpage
    411
  • Lastpage
    412
  • Abstract
    The bias and gain stabilized integrated linear IGFET circuit is considered. An IGFET is used as a load element in the reactance mode. The experimental result shows that the bias point moves only 0.15 volt over the temperature range from 3°C to 100°C.
  • Keywords
    Capacitance; Circuit stability; Cutoff frequency; Dielectrics and electrical insulation; Equations; Gain; Moment methods; Polynomials; Shape; Tellurium;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IEEE
  • Publisher
    ieee
  • ISSN
    0018-9219
  • Type

    jour

  • DOI
    10.1109/PROC.1967.5502
  • Filename
    1447432
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=888263