DocumentCode
888304
Title
Tellurium TFT´s exceed 100-MHz and one-watt capabilities
Author
Gutierrez, W.A.
Volume
55
Issue
3
fYear
1967
fDate
3/1/1967 12:00:00 AM
Firstpage
415
Lastpage
416
Abstract
Tellurium thin-film triodes were formed on quartz substrates which exhibited gain-bandwidth-products up to 170 MHz. Gain-bandwidth-products of 50 MHz and one-watt dissipation capabilities were exhibited by tellurium TFT´s formed on sapphire substrates.
Keywords
Autocorrelation; Conductive films; Dielectric substrates; Frequency; Gain measurement; Power dissipation; Power generation; Random processes; Tellurium; Thin film transistors;
fLanguage
English
Journal_Title
Proceedings of the IEEE
Publisher
ieee
ISSN
0018-9219
Type
jour
DOI
10.1109/PROC.1967.5506
Filename
1447436
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