DocumentCode :
888472
Title :
High power pulsed microwave generation in gallium arsenide
Author :
Eastman, L.F.
Volume :
55
Issue :
3
fYear :
1967
fDate :
3/1/1967 12:00:00 AM
Firstpage :
434
Lastpage :
435
Abstract :
Experimental results for a Gunn diode operated in the "LSA" mode of operation at X-band frequencies are reported. Powers as high as 33 watts have been obtained. Theoretical limits in both power and frequency for this mode of operation are also discussed.
Keywords :
Diodes; Doping; Frequency; Gallium arsenide; Gunn devices; Impact ionization; Impedance; Microwave generation; Power generation; Threshold voltage;
fLanguage :
English
Journal_Title :
Proceedings of the IEEE
Publisher :
ieee
ISSN :
0018-9219
Type :
jour
DOI :
10.1109/PROC.1967.5522
Filename :
1447452
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=888472
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