DocumentCode
888479
Title
High-efficiency pulsed GaAs avalanche diodes
Author
Melick, D.R.
Volume
55
Issue
3
fYear
1967
fDate
3/1/1967 12:00:00 AM
Firstpage
435
Lastpage
436
Abstract
Efficiencies as high as 7.8 percent yielding 380 mW at 6.8 GHz and output powers up to 1.3 watts at 6.5 GHz (3.6 percent efficiency) have been observed in GaAs p-n junction avalanche diodes. Diode diameters ranged from 2.5 to 7.5 mils with best efficiencies occurring in the range from 2.5 to 4.2 mils, for the circuit used.
Keywords
Crystals; Diodes; Doping; Frequency; Gallium arsenide; Planar waveguides; Resistance heating; Resonance; Skin; Slabs;
fLanguage
English
Journal_Title
Proceedings of the IEEE
Publisher
ieee
ISSN
0018-9219
Type
jour
DOI
10.1109/PROC.1967.5523
Filename
1447453
Link To Document