DocumentCode
888489
Title
Temperature dependence of single-event burnout in n-channel power MOSFETs [for space application]
Author
Johnson, Gregory H. ; Schrimpf, Ronald D. ; Galloway, Kenneth F. ; Koga, Rocky
Author_Institution
Dept. of Electr. & Comput. Eng., Arizona Univ., Tucson, AZ, USA
Volume
39
Issue
6
fYear
1992
fDate
12/1/1992 12:00:00 AM
Firstpage
1605
Lastpage
1612
Abstract
The temperature dependence of single-event burnout (SEB) in n-channel power MOSFETs is investigated experimentally and analytically. Experimental data are presented which indicate that the SEB susceptibility of the power MOSFET decreases with increasing temperature. A previously reported analytical model that describes the SEB mechanism is updated to include temperature variations. This model is shown to agree with the experimental trends
Keywords
insulated gate field effect transistors; ion beam effects; power transistors; radiation hardening (electronics); semiconductor device models; heavy ion effects; model; n-channel power MOSFETs; single-event burnout; spaceborne systems; temperature dependence; Aerospace engineering; Application software; FETs; MOSFETs; Nondestructive testing; Temperature control; Temperature dependence; Temperature sensors; Thermal sensors; Voltage;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/23.211342
Filename
211342
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