Title :
Temperature dependence of single-event burnout in n-channel power MOSFETs [for space application]
Author :
Johnson, Gregory H. ; Schrimpf, Ronald D. ; Galloway, Kenneth F. ; Koga, Rocky
Author_Institution :
Dept. of Electr. & Comput. Eng., Arizona Univ., Tucson, AZ, USA
fDate :
12/1/1992 12:00:00 AM
Abstract :
The temperature dependence of single-event burnout (SEB) in n-channel power MOSFETs is investigated experimentally and analytically. Experimental data are presented which indicate that the SEB susceptibility of the power MOSFET decreases with increasing temperature. A previously reported analytical model that describes the SEB mechanism is updated to include temperature variations. This model is shown to agree with the experimental trends
Keywords :
insulated gate field effect transistors; ion beam effects; power transistors; radiation hardening (electronics); semiconductor device models; heavy ion effects; model; n-channel power MOSFETs; single-event burnout; spaceborne systems; temperature dependence; Aerospace engineering; Application software; FETs; MOSFETs; Nondestructive testing; Temperature control; Temperature dependence; Temperature sensors; Thermal sensors; Voltage;
Journal_Title :
Nuclear Science, IEEE Transactions on
