Title :
A comparison of charge collection effects between GaAs MESFETs and III-V HFETs
Author :
Hughlock, B. ; Johnston, A. ; Williams, T. ; Harrang, J.
Author_Institution :
Boeing Defense & Space Group, Seattle, WA, USA
fDate :
12/1/1992 12:00:00 AM
Abstract :
The ion-induced gate edge effect and excess charge collection effect present in GaAs MESFETs are not present in InP and GaAs HFETs. An SEU (single event upset) characterization study shows that these devices can provide an SEU rate which is lower than that of unhardened CMOS
Keywords :
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; indium compounds; ion beam effects; junction gate field effect transistors; radiation hardening (electronics); GaAs; III-V semiconductors; InP; SEU; charge collection effects; ion-induced gate edge effect; radiation hardening; space applications; Gallium arsenide; HEMTs; III-V semiconductor materials; Indium phosphide; Logic circuits; MESFETs; MODFETs; Protons; Space charge; Space technology;
Journal_Title :
Nuclear Science, IEEE Transactions on
