Laser simulation of single-particle effects

Author

Gossett, C.A. ; Hughlock, B.W. ; Johnston, A.H.

Author_Institution

Boeing Defense & Space Group, Seattle, WA, USA

Volume

39

Issue

6

fYear

1992

fDate

12/1/1992 12:00:00 AM

Firstpage

1647

Lastpage

1653

Abstract

The authors examine laser simulation of single-particle effects in some detail, investigating the effects of doping density and charge collection depth on funneling and charge collection, and accounting for the spreading of the focused laser beam within the silicon material. Calculations using the device simulation code PISCES are compared for heavy ions and lasers to investigate the accuracy of laser simulation of single-particle effects. Experimental charge collection measurements with heavy ions are used to establish the accuracy of the PISCES simulations

Keywords

aerospace computing; aerospace instrumentation; aerospace simulation; aerospace testing; electronic engineering computing; ion beam effects; laser beam effects; radiation hardening (electronics); semiconductor device models; semiconductor device testing; PISCES; charge collection depth; device simulation code; effects of doping density; funneling; heavy ions; laser simulation; semiconductor device simulation; single-particle effects; spreading; Apertures; Laser beams; Optical materials; Optical pulses; Optical reflection; Optical refraction; Particle tracking; Semiconductor lasers; Silicon; Space technology;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.211348

Filename

211348