Charge transfer and blooming suppression of charge transfer photodiode area array

A charge-transfer photodiode array combines the advantages of diffused diodes for broad and smooth spectral response and analog registers for low-noise readout. The device structure described is that of a high-speed low-blooming 100-by-100 diode array using bucket-brigade readout registers. Two of the mechanisms which are essential to successful operation of this combination structure are studied. These mechanisms are the charge transfer from sensing diode to the analog register and blooming suppression. It is found that the charge-transfer speed degrades sharply with reducing light level due to subthreshold leakage behavior of the MOS transfer gate. This degradation is eliminated by using a background charge supplied from the analog register. Experimental data confirms the validity of the concept.