• DocumentCode
    888581
  • Title

    Laser confirmation of SEU experiments in GaAs MESFET combinational logic [for space application]

  • Author

    Schneiderwind, R. ; Krening, D. ; Buchner, S. ; Kang, K. ; Weatherford, T.R.

  • Author_Institution
    Martin Marietta Astronautics, Denver, CO, USA
  • Volume
    39
  • Issue
    6
  • fYear
    1992
  • fDate
    12/1/1992 12:00:00 AM
  • Firstpage
    1665
  • Lastpage
    1670
  • Abstract
    Majority vote and self-scrubbing circuitry were utilized to harden the registers of a GaAs logic circuit to single event upsets (SEUs). Ion beam testing of the hardened part at low scrub frequencies showed fewer system upsets than that of an unhardened part. At high frequencies, the upset rate increased with frequency, indicating a clock-dependent SEU sensitive node. A pulsed laser was used to identify an input node in the self-scrubbing circuitry as being the source of the upsets at high frequencies. Because the node was only sensitive for a short duration prior to the rising clock edge, more clock-edge-dependent SEUs could occur at higher frequencies. The relative SEU thresholds of the registers and the input node measured with the laser showed excellent agreement with ion data. All single-point SEU failure nodes were identified and their upset thresholds measured. With this information it was possible to redesign the circuit to reduce its sensitivity to SEU at high scrub frequencies
  • Keywords
    III-V semiconductors; aerospace testing; combinatorial circuits; environmental testing; field effect integrated circuits; gallium arsenide; integrated circuit testing; integrated logic circuits; ion beam effects; laser beam effects; logic testing; radiation hardening (electronics); GaAs logic circuit; III-V semiconductor; MESFET combinational logic; SEU experiments; clock-edge-dependent; high scrub frequencies; input node; ion beam testing; majority vote circuitry; pulsed laser; self-scrubbing circuitry; space application; Circuit testing; Clocks; Frequency; Gallium arsenide; Ion beams; Logic circuits; MESFETs; Registers; Single event upset; Voting;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/23.211351
  • Filename
    211351