DocumentCode
888581
Title
Laser confirmation of SEU experiments in GaAs MESFET combinational logic [for space application]
Author
Schneiderwind, R. ; Krening, D. ; Buchner, S. ; Kang, K. ; Weatherford, T.R.
Author_Institution
Martin Marietta Astronautics, Denver, CO, USA
Volume
39
Issue
6
fYear
1992
fDate
12/1/1992 12:00:00 AM
Firstpage
1665
Lastpage
1670
Abstract
Majority vote and self-scrubbing circuitry were utilized to harden the registers of a GaAs logic circuit to single event upsets (SEUs). Ion beam testing of the hardened part at low scrub frequencies showed fewer system upsets than that of an unhardened part. At high frequencies, the upset rate increased with frequency, indicating a clock-dependent SEU sensitive node. A pulsed laser was used to identify an input node in the self-scrubbing circuitry as being the source of the upsets at high frequencies. Because the node was only sensitive for a short duration prior to the rising clock edge, more clock-edge-dependent SEUs could occur at higher frequencies. The relative SEU thresholds of the registers and the input node measured with the laser showed excellent agreement with ion data. All single-point SEU failure nodes were identified and their upset thresholds measured. With this information it was possible to redesign the circuit to reduce its sensitivity to SEU at high scrub frequencies
Keywords
III-V semiconductors; aerospace testing; combinatorial circuits; environmental testing; field effect integrated circuits; gallium arsenide; integrated circuit testing; integrated logic circuits; ion beam effects; laser beam effects; logic testing; radiation hardening (electronics); GaAs logic circuit; III-V semiconductor; MESFET combinational logic; SEU experiments; clock-edge-dependent; high scrub frequencies; input node; ion beam testing; majority vote circuitry; pulsed laser; self-scrubbing circuitry; space application; Circuit testing; Clocks; Frequency; Gallium arsenide; Ion beams; Logic circuits; MESFETs; Registers; Single event upset; Voting;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/23.211351
Filename
211351
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