Mechanism for single-event burnout of power MOSFETs and its characterization technique

Author

Kuboyama, S. ; Matsuda, S. ; Kanno, T. ; Ishii, T.

Author_Institution

Nat. Space Dev. Agency of Japan, Ibaraki, Japan

Volume

39

Issue

6

fYear

1992

fDate

12/1/1992 12:00:00 AM

Firstpage

1698

Lastpage

1703

Abstract

A novel characterization technique for single event burnout (SEB) of power MOSFETs was developed. The technique is based on a pulse-height analyzer system for charge collection measurement with a modified charge-sensitive amplifier which has a very wide dynamic range. The data obtained by this technique give detailed information about the SEB mechanism of power MOSFETs. The experimental data suggested a position-independent charge collection mechanism along an ion track, and a new parameter for SEB hardness was proposed

Keywords

insulated gate field effect transistors; ion beam effects; power transistors; radiation hardening (electronics); semiconductor device testing; SEU hardness; characterization technique; charge collection measurement; modified charge-sensitive amplifier; position-independent mechanism; power MOSFET; pulse-height analyzer system; single-event burnout; space application; Capacitors; Charge measurement; Circuits; Condition monitoring; Current measurement; Dynamic range; MOSFETs; Pulse amplifiers; Pulse measurements; Voltage;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.211356

Filename

211356