DocumentCode :
888634
Title :
An Embeddable Multilevel-Cell Solid Electrolyte Memory Array
Author :
Gilbert, Nad E. ; Kozicki, Michael N.
Author_Institution :
Desert Microtechnology Associates Inc, Scottsdale, AZ
Volume :
42
Issue :
6
fYear :
2007
fDate :
6/1/2007 12:00:00 AM
Firstpage :
1383
Lastpage :
1391
Abstract :
Nonvolatile memory cells based on solid electrolytes have many desirable attributes, including low-voltage and low-current operation and a simple process that allows them to be integrated with conventional CMOS processes with minimal additional masking layers. In this paper, we present a 2-kb memory block/testbed (1024 elements) using solid electrolyte cells. The compact memory design addresses many of the unusual operational issues associated with the solid electrolyte elements and allows for two digital bits to be stored and read from each cell with minimal circuitry. The design was fabricated in 0.18-mum CMOS technology and the simulation and physical data are presented. Multilevel-cell (MLC) operation was demonstrated for a 10-muA reference current with a 437-ns cycle time and sub-40-ns access times
Keywords :
CMOS memory circuits; electrolytic devices; random-access storage; solid electrolytes; 0.18 micron; 10 muA; 437 ns; CMOS technology; embeddable multilevel cell; memory array; nonvolatile memory; programmable metallization cell; solid electrolyte; CMOS process; CMOS technology; Circuit simulation; Circuit testing; EPROM; Electrodes; Metallization; Nonvolatile memory; Solids; Tungsten; Multilevel cell (MLC); nonvolatile memory; programmable metallization cell; solid electrolyte;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/JSSC.2007.897172
Filename :
4214967
Link To Document :
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