DocumentCode
888646
Title
64K DSA ROM
Author
Kamuro, Setsufumi ; Sano, Kenji ; Kimura, Seiji ; Aoki, Yoshimasa
Volume
15
Issue
2
fYear
1980
fDate
4/1/1980 12:00:00 AM
Firstpage
253
Lastpage
254
Abstract
A 64K (8K/spl times/8) fully-static ROM has been developed using DSA E/D MOS technology. The ROM bit pattern is programmed on the diffusion mask. A new address decoder circuit has been designed and implemented in the device. ROM cell size is 11.5/spl times/15 /spl mu/m, and chip size is 5.05/spl times/5.05 mm.
Keywords
Field effect integrated circuits; Integrated memory circuits; Read-only storage; field effect integrated circuits; integrated memory circuits; read-only storage; Band pass filters; Circuits; Conductivity; Electrons; Fabrication; Ion implantation; MOSFETs; Operational amplifiers; Read only memory; Substrates;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/JSSC.1980.1051373
Filename
1051373
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