Investigation of the oxygen-vacancy (A-center) defect complex profile in neutron irradiated high resistivity silicon junction particle detectors

Author

Li, Zheng ; Kraner, H.W. ; Verbitskaya, E. ; Eremin, V. ; Ivanov, A. ; Rattaggi, Monica ; Rancoita, P.G. ; Rubinelli, F.A. ; Fonash, S.J. ; Dale, C. ; Marshall, P.

Author_Institution

Brookhaven Nat. Lab., Upton, NY, USA

Volume

39

Issue

6

fYear

1992

fDate

12/1/1992 12:00:00 AM

Firstpage

1730

Lastpage

1738

Abstract

The distribution of the A-center (oxygen vacancy) in neutron-damaged silicon detectors was studied using deep level transient spectroscopy. A-centers were found to be nearly uniformly distributed in the silicon wafer depth for medium-resistivity (0.1-0.2-kΩ-cm) silicon detectors and high-resistivity (>4-kΩ-cm) high-temperature (1200°C) oxidized detectors. A positive filling pulse was needed to detect the A-centers in high-resistivity silicon detectors, and this effect was found to be dependent on the oxidation temperature. The A-center was not observed in a sample from a high-temperature oxidation with TCA having a very high carbon content

Keywords

A-centres; deep level transient spectroscopy; defect electron energy states; elemental semiconductors; neutron effects; oxidation; semiconductor counters; silicon; vacancies (crystal); 1200 C; A-centers; Si detectors; Si:O; deep level transient spectroscopy; elemental semiconductor; high-temperature oxidised detectors; neutron irradiated high resistivity; oxidation temperature; particle detectors; vacancy defect complex profile; Conductivity; Degradation; Gettering; Laboratories; Leakage current; Neodymium; Neutrons; Radiation detectors; Silicon; Spectroscopy;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.211360

Filename

211360