DocumentCode
888724
Title
Investigation into SiGe HBT class E/F PA efficiency at 2 GHz for VDD from 1 to 1.8 V
Author
O´Sullivan, J.A. ; McCarthy, K.G. ; Murphy, A.C. ; Murphy, P.J.
Author_Institution
Dept. of Electr. & Electron. Eng., Univ. Coll. Cork, Ireland
Volume
16
Issue
4
fYear
2006
fDate
4/1/2006 12:00:00 AM
Firstpage
170
Lastpage
172
Abstract
This letter presents a 2-GHz SiGe heterojunction bipolar transistor fully integrated class E/F power amplifier (PA) design operating at low supply voltage. A maximum measured power added efficiency (PAE) of 39% is achieved for a supply voltage of 1.8V. At 1V, a maximum PAE of 36% is measured. The PA was fabricated using an advanced 0.18-μm BiCMOS process.
Keywords
BiCMOS analogue integrated circuits; Ge-Si alloys; UHF integrated circuits; UHF power amplifiers; bipolar integrated circuits; low-power electronics; 0.18 micron; 1 to 1.8 V; 2 GHz; BiCMOS process; SiGe; heterojunction bipolar transistors; integrated HBT class E-F power amplifier; BiCMOS integrated circuits; Germanium silicon alloys; Heterojunction bipolar transistors; Low voltage; Power amplifiers; Power measurement; Silicon germanium; Switches; Thermal conductivity; Transceivers; Class E/F; RFIC power amplifier (PA); heterojunction bipolar transistor (HBT);
fLanguage
English
Journal_Title
Microwave and Wireless Components Letters, IEEE
Publisher
ieee
ISSN
1531-1309
Type
jour
DOI
10.1109/LMWC.2006.872144
Filename
1613885
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