DocumentCode :
888811
Title :
Electronically Temperature Compensated Silicon Bulk Acoustic Resonator Reference Oscillators
Author :
Sundaresan, Krishnakumar ; Ho, Gavin K. ; Pourkamali, Siavash ; Ayazi, Farrokh
Author_Institution :
GE Global Res., Niskayuna
Volume :
42
Issue :
6
fYear :
2007
fDate :
6/1/2007 12:00:00 AM
Firstpage :
1425
Lastpage :
1434
Abstract :
The paper describes the design and implementation of an electronically temperature compensated reference oscillator based on capacitive silicon micromechanical resonators. The design of a 5.5-MHz silicon bulk acoustic resonator has been optimized to offer high quality factor (> 100 000) while maintaining tunability in excess of 3000 ppm for fine-tuning and temperature compensation. Oscillations are sustained with a CMOS amplifier. When interfaced with the temperature compensating bias circuit, the oscillator exhibits a frequency drift of 39 ppm over 100degC as compared to an uncompensated frequency drift of 2830 ppm over the same range. The sustaining amplifier and compensation circuitry were fabricated in a 2P3M 0.6-mum CMOS process.
Keywords :
CMOS integrated circuits; Q-factor; amplifiers; bulk acoustic wave devices; micromechanical resonators; oscillators; CMOS amplifier; bulk acoustic resonator oscillators; electronic temperature compensated reference oscillator; frequency 5.5 MHz; quality factor; size 0.6 mum; temperature compensating bias circuit; Circuits; Electrostatics; Frequency; Micromechanical devices; Oscillators; Q factor; Silicon; Stability; Temperature distribution; Voltage; MEMS oscillators and temperature compensation; MEMS resonators; Reference oscillators;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/JSSC.2007.896521
Filename :
4214984
Link To Document :
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