Double upsets from glancing collisions: a simple model verified with flight data [SRAM]

Author

Smith, E.C. ; Shoga, Munir

Volume

39

Issue

6

fYear

1992

fDate

12/1/1992 12:00:00 AM

Firstpage

1859

Lastpage

1864

Abstract

A simple model for the geometry for lateral strikes by heavy ions has been developed. Rates for double upsets in a 93L422 RAM (random access memory) have been calculated with the geometry model and with an integral approach for calculating the upset rates when there is a distribution of charge deposition for upset. The method of calculating upset rates has been verified with flight data on single events from two geostationary satellites, and the geometry model has been verified with double upset events observed on one of them. The single rates agree with observations to within a factor of two, and the fraction of double rates is in close agreement with the flight data. Events were observed when there was a minimum of solar activity so that the contribution from proton upsets was negligible

Keywords

CMOS integrated circuits; SRAM chips; aerospace instrumentation; ion beam effects; 93L422 RAM; double upsets; flight data; geometry model; geostationary satellites; glancing collisions; heavy ions; integral approach; lateral strikes; model; single events; upset rates; Aircraft; Error correction; Information geometry; Ion accelerators; Photomicrography; Random access memory; Read-write memory; Satellites; Single event upset; Solid modeling;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.211378

Filename

211378