Title :
Unified field-effect transistor theory including velocity saturation
fDate :
6/1/1980 12:00:00 AM
Abstract :
It is shown that in any kind of field-effect transistor structure, the usual gradual channel approximation solutions developed for v=μ/SUB 0/E also hold in a slightly modified form for v=μ/SUB 0/E/|1+(μ/SUB 0/E/v/SUB s/)| which gives a good approximation to the velocity field relationship in silicon FETs.
Keywords :
Field effect transistors; field effect transistors; Cryptography; Electric breakdown; FETs; Gallium arsenide; MOSFET circuits; Mathematics; Semiconductor memory; Silicon; Solid state circuits; Threshold voltage;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1980.1051393
