• DocumentCode
    888871
  • Title

    High-voltage DIMOS driver circuit

  • Author

    Pomper, Michael ; Leipold, Ludwig ; Tihanyi, Jenö ; Longo, Hans-Eberhard

  • Volume
    15
  • Issue
    3
  • fYear
    1980
  • fDate
    6/1/1980 12:00:00 AM
  • Firstpage
    328
  • Lastpage
    330
  • Abstract
    High-voltage output driver circuits realized with double-implanted MOS (DIMOS) transistors are presented. Breakdown voltages exceed 100 V. Dynamic bootstrap techniques resulted in circuits combining low power (5 mW) and fast switching times (150 ns) at typical operating conditions of 5 V/50 V, 50 pF, and 16 kHz.
  • Keywords
    Bootstrap circuits; Field effect integrated circuits; bootstrap circuits; field effect integrated circuits; Costs; Doping; Driver circuits; Electric breakdown; Fabrication; MOSFETs; Resistors; Silicon; Switching circuits; Voltage;
  • fLanguage
    English
  • Journal_Title
    Solid-State Circuits, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9200
  • Type

    jour

  • DOI
    10.1109/JSSC.1980.1051394
  • Filename
    1051394
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=888871