DocumentCode
888896
Title
Dose-rate-independent total dose failure in 54F10 bipolar logic circuits
Author
Jenkins, William C.
Author_Institution
US Naval Res. Lab., Washington, DC, USA
Volume
39
Issue
6
fYear
1992
fDate
12/1/1992 12:00:00 AM
Firstpage
1899
Lastpage
1902
Abstract
The 60Co gamma ray total dose performance of unhardened bipolar 54F10 TTL (transistor transistor logic) integrated circuits was measured over dose rates from 0.0088 rad(SiO2)/s to 28 rad(SiO2)/s. Contrary to what others have reported on the 54F logic family, failure was independent of dose rate. This result implies that these parts are undesirable for use in a space environment. One manufacturer´s part failed due to excessive input high current at total doses from 20 to 30 krad(SiO2) and the other failed at total doses from 7 to 9.5 krad(SiO2). Thus, when considering a family of bipolar devices for application at space dose rates, each member of the family must be examined. It is pointed out that extrapolating total dose radiation measurements made at laboratory dose rates to sweeping conclusions about the performance of an unhardened process or device family at space dose rates can be misleading
Keywords
bipolar integrated circuits; gamma-ray effects; integrated logic circuits; radiation hardening (electronics); transistor-transistor logic; 54F10 bipolar logic circuits; dose rate independence; gamma ray total dose performance; space environment; total dose failure; unhardened bipolar 54F10 TTL; Application specific integrated circuits; Bipolar integrated circuits; High speed integrated circuits; Integrated circuit measurements; Laboratories; Logic circuits; Semiconductor diodes; Space technology; Testing; Vehicles;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/23.211384
Filename
211384
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