Improving the radiation burn-out susceptibility of N-channel power MOSFETs

Author

Keshavarz, Abdol A. ; Fischer, Thomas A.

Author_Institution

Alliance Technologies Inc., Albuquerque, NM, USA

Volume

39

Issue

6

fYear

1992

fDate

12/1/1992 12:00:00 AM

Firstpage

1943

Lastpage

1946

Abstract

Computer simulation was used to calculate the dose-rate thresholds of several different power MOSFET structures. Computational results indicate that significant improvements in radiation tolerance and burnout of the device are possible by reducing the lateral size of the power MOSFET unit cell or by using a lower emitter injection efficiency for the bipolar structure. Modification of some other factors, such as the base minority carrier lifetime or the epi/substrate interface shape, shows some minor improvements in device radiation tolerance

Keywords

insulated gate field effect transistors; ion beam effects; power transistors; radiation hardening (electronics); semiconductor device models; N-channel power MOSFETs; base minority carrier lifetime; bipolar structure; computer simulation; dose-rate thresholds; epi/substrate interface shape; lateral size; lower emitter injection efficiency; radiation burn-out susceptibility; Charge carrier lifetime; Computational modeling; Computer simulation; Contracts; Ionizing radiation; Laboratories; MOSFETs; Radiation hardening; Shape; Voltage;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.211389

Filename

211389