Title :
Ionizing radiation effects on phosphorus implanted N+ poly gate MOS capacitors with thin gate oxides
Author :
Kelleher, A. ; Heyns, M. ; Wulf, F. ; Lane, W.
Author_Institution :
Nat. Microelectron. Res. Centre, Univ. Coll., Cork, Ireland
fDate :
12/1/1992 12:00:00 AM
Abstract :
Radiation effects on phosphorus implanted N+ poly-gate MOS capacitors with a 15-nm oxide grown at different temperatures are investigated. The dependence of the radiation hardness of thin gate oxides on the oxidation temperature as a function of the irradiation bias is investigated, and the results obtained are compared with those of previous studies for both thick and thin oxides. It is shown that the response of the gate oxide depends on the temperature of the phosphorus implant anneal for n+ poly implanted gate with an implant energy of 50 keV. A qualitative model is proposed to explain the negative trapping exhibited in the oxides of the capacitors which received an 850°C implant anneal. The model suggests that these electron traps are related to the phosphorus concentration and its electrical activation in the oxide due to the implant anneal temperature
Keywords :
CMOS integrated circuits; annealing; electron beam effects; electron traps; gamma-ray effects; interface electron states; ion implantation; metal-insulator-semiconductor devices; oxidation; radiation hardening (electronics); 50 keV; 850 C to 1000 C; CMOS; N+ poly gate MOS capacitors; Si:P devices; SiO2-Si:P; electron irradiated; electron traps; gamma irradiated; hole trapping; implant anneal; interface trap density; ionizing radiation effects; irradiation bias; model; negative trapping; oxidation temperature; polysilicon; radiation hardness; thin gate oxides; Annealing; Charge carrier processes; Geometry; Implants; Ionizing radiation; MOS capacitors; MOS devices; Microelectronics; Oxidation; Temperature dependence;
Journal_Title :
Nuclear Science, IEEE Transactions on
