Comparison of 1/f noise in irradiated power MOSFETs measured in the linear and saturation regions

Author

Augier, P. ; Todsen, J.L. ; Zupac, D. ; Schrimpf, R.D. ; Galloway, K.F. ; Babcock, J.A.

Author_Institution

Dept. of Electr. & Comput. Eng., Arizona Univ., Tucson, AZ, USA

Volume

39

Issue

6

fYear

1992

fDate

12/1/1992 12:00:00 AM

Firstpage

2012

Lastpage

2017

Abstract

1/f noise in n-channel and p-channel power MOSFETs is investigated as a function of total dose and annealing. All the devices used in this study are nonhardened commercial parts. The preirradiation noise dependence on the gate and drain biases is analyzed. A different evolution of the noise measured in the linear and saturation regions through irradiation and annealing is reported. The build-up of interface traps was found to correlate well with the increase of noise during annealing for the p-channel devices. Measurements taken in the saturation region do not correlate as well with radiation-induced charge build-up, even though the overall noise increases slightly during irradiation

Keywords

annealing; insulated gate field effect transistors; interface electron states; power transistors; radiation effects; radiation hardening (electronics); random noise; semiconductor device noise; 1/f noise; annealing; bias dependence; build-up of interface traps; irradiated power MOSFETs; linear region; n-channel; nonhardened commercial parts; p-channel; saturation region; total dose; Annealing; Background noise; Contracts; Kinetic theory; MOSFETs; Noise level; Noise measurement; Nuclear measurements; Power measurement; Semiconductor device noise;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.211398

Filename

211398