Title :
GaInAs/InP DHBT incorporating thick extrinsic base and selectively regrown emitter
Author :
Miyamoto, Y. ; Dental, A.G. ; Rios, J.M.M. ; Chandrasekhar, S.
Author_Institution :
Crawford Hill Lab., AT&T Bell Labs., Holmdel, NJ, USA
fDate :
8/17/1995 12:00:00 AM
Abstract :
A novel approach for realising a double heterojunction bipolar transistor (DHRT) with a low base resistance, which incorporates a thick extrinsic base and a regrown emitter is proposed and demonstrated. A combination of selective MOVPE regrowth and selective wet chemical etching resulted in a new self-aligned DHBT structure. Fabricated microwave transistors exhibited good DC and microwave characteristics
Keywords :
III-V semiconductors; etching; gallium arsenide; heterojunction bipolar transistors; indium compounds; microwave bipolar transistors; semiconductor growth; vapour phase epitaxial growth; DC characteristics; GaInAs-InP; HBT fabrication; double heterojunction bipolar transistor; microwave characteristics; microwave transistors; selective MOVPE regrowth; selective wet chemical etching; selectively regrown emitter; self-aligned DHBT structure; thick extrinsic base;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19951020
