Title :
The effect of junction fringing fields on radiation-induced leakage current in oxide isolation structures
Author :
Pershenkov, V.S. ; Chuikin, V.V.
Author_Institution :
Dept. of Microelectron., Moscow Phys. Eng. Inst., USSR
fDate :
12/1/1992 12:00:00 AM
Abstract :
A novel leakage current model at the bottom of the recessed field oxide associated with the effects of PN junction fringing electric fields during irradiation is presented. Analytical expressions are derived for leakage current as a function of DC bias conditions during irradiation of the substrate and of the buried layer doping levels. Values of the P+ channel stop and buried layer doping levels for leakage minimization are discussed. Experimental data for the leakage current as a function of irradiation bias and high-temperature annealing are described. Experimental data include the effects of structure nonuniformities on the leakage formation
Keywords :
X-ray effects; insulated gate field effect transistors; integrated circuit technology; leakage currents; radiation hardening (electronics); semiconductor device models; DC bias conditions; MOSFET; P+ channel stop; X-ray irradiation; buried layer doping levels; effect of junction fringing fields; high-temperature annealing; irradiation bias; leakage current model; leakage minimization; oxide isolation structures; radiation hardening; radiation-induced leakage current; recessed field oxide; structure nonuniformities; Annealing; Degradation; Doping; Large scale integration; Leakage current; Microelectronics; Minimization; Physics; Semiconductor process modeling; Temperature;
Journal_Title :
Nuclear Science, IEEE Transactions on
