Title :
InGaAs/lnP heterojunction bipolar transistor grown by all-solid source molecular beam epitaxy
Author :
Willen, B. ; Asonen, H. ; Toivonen, M.
Author_Institution :
Dept. of Electron., R. Inst. of Technol., Kista, Sweden
fDate :
8/17/1995 12:00:00 AM
Abstract :
State-of-the-art InGaAs/InP heterojunction bipolar transistors were grown by all-solid source molecular beam epitaxy. Fabricated transistors showed cutoff frequencies of >100 GHz with an emitter area of 1.5×5 μm2. Together with recent studies. These results demonstrate that the valved cracker technique is a very competitive nontoxic growth method
Keywords :
III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; microwave bipolar transistors; molecular beam epitaxial growth; 100 GHz; HBT fabrication; InGaAs-InP; all-solid source MBE; heterojunction bipolar transistor; molecular beam epitaxy; nontoxic growth method; valved cracker technique;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19951015
