Title :
Total dose hardness of bonded SOI wafers
Author :
McKitterick, John B. ; Caviglia, Anthony ; Maszara, W.P.
Author_Institution :
Alied-Signal Aerosp. Technol. Center, Columbia, MD, USA
fDate :
12/1/1992 12:00:00 AM
Abstract :
The response of the buried oxide in bonded and etched-back silicon-on-insulator (SOI) wafers to radiation doses up to 2 Mrad(Si) was measured. The results indicate that the hardness of the buried oxide can be very good, at least that of a good thermally grown oxide, with only small effects from the bond. The amount of charge created in the buried oxide was independent of the thickness of the buried oxide. The buried oxide can easily be made hard enough to prevent back-channel turn-on in nonfully-depleted FETs at doses of at least 2 Mrad(Si)
Keywords :
MOS integrated circuits; gamma-ray effects; insulated gate field effect transistors; radiation hardening (electronics); semiconductor-insulator boundaries; wafer bonding; 2 Mrad; BESOI; NMOS transistors; Si-SiO2; back-channel turn-on; bond and etchback SOI; bonded SOI wafers; buried oxide; gamma irradiation; nonfully-depleted FETs; total dose hardness; Annealing; CMOS process; Capacitors; Etching; FETs; Insulation; Silicon on insulator technology; Temperature; Thermal degradation; Wafer bonding;
Journal_Title :
Nuclear Science, IEEE Transactions on
