Title :
An Advanced PSA Technology for High-Speed Bipolar LSI
Author :
Nakashiba, Hiroshi ; Ishida, Ichiro ; Aomura, Kunio ; Nakamura, Toshio
Abstract :
An advanced method for polysilicon self-aligned (PSA) bipolar LSI technology has realized a miniaturized transistor for high performance. By introducing the overlapping structure for double poly-silicon electrodes, the emitter area is reduced to 1/spl mu/m X 3 /spl mu/m and the base junction is reduced to 0.3 /spl mu/m. The CML integrated circuit composed of this transistor has achieved a minimum propagation delay time of 0.29 ns/gate with power dissipation of 1.48 mW/gate. Compared to the conventional PSA method, this technology promises to fabricate higher speed and higher density LSI´s.
Keywords :
Bipolar integrated circuits; Emitter-coupled logic; Integrated logic circuits; Large scale integration; Electrodes; Integrated circuit interconnections; Integrated circuit technology; Large scale integration; Oxidation; Power dissipation; Propagation delay; Resistors; Silicon; Transistors;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1980.1051421
