DocumentCode
889149
Title
Vertical p-n-p for Complementary Bipolar Technology
Author
Magdo, Ingrid E.
Volume
15
Issue
4
fYear
1980
fDate
8/1/1980 12:00:00 AM
Firstpage
459
Lastpage
461
Abstract
A process to fabricate high-performance vertical p-n-p devices has been developed. The use of a high-dose bolon-implanted poly-Si layer to form the emitter is essential to obtain shallow emitters with high emitter gradient. The devices exhibit very high current gain (>200) and a calculated cutoff frequency of 3.6 GHz. The process as developed is compatible with the n-p-n process and, thus, suitable for fabrication of complementary bipolar devices.
Keywords
Bipolar integrated circuits; Integrated circuit technology; Ion implantation; Large scale integration; Semiconductor doping; Boron; Circuits; Electron devices; Frequency conversion; Helium; Implants; Large scale integration; Stacking; Substrates; Transistors;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/JSSC.1980.1051422
Filename
1051422
Link To Document