Title :
Vertical p-n-p for Complementary Bipolar Technology
Author :
Magdo, Ingrid E.
fDate :
8/1/1980 12:00:00 AM
Abstract :
A process to fabricate high-performance vertical p-n-p devices has been developed. The use of a high-dose bolon-implanted poly-Si layer to form the emitter is essential to obtain shallow emitters with high emitter gradient. The devices exhibit very high current gain (>200) and a calculated cutoff frequency of 3.6 GHz. The process as developed is compatible with the n-p-n process and, thus, suitable for fabrication of complementary bipolar devices.
Keywords :
Bipolar integrated circuits; Integrated circuit technology; Ion implantation; Large scale integration; Semiconductor doping; Boron; Circuits; Electron devices; Frequency conversion; Helium; Implants; Large scale integration; Stacking; Substrates; Transistors;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1980.1051422
