Evidence for a deep electron trap and charge compensation in separation by implanted oxygen oxides

Author

Conley, J.F. ; Lenahan, P.M. ; Roitman, P.

Author_Institution

Pennsylvania State Univ., University Park, PA, USA

Volume

39

Issue

6

fYear

1992

fDate

12/1/1992 12:00:00 AM

Firstpage

2114

Lastpage

2120

Abstract

The authors present direct evidence for the creation of deep electron traps in SIMOX (separation by implantation of oxygen) buried oxides. In addition, they present combined electrical and electron spin resonance evidence which demonstrates that at least some positively charged paramagnetic E´ centers are compensated by negatively charged centers. Finally, they present evidence which strongly suggests that a substantial fraction of the deep electron traps are coupled to E´ centers

Keywords

SIMOX; charge compensation; deep levels; electron traps; gamma-ray effects; paramagnetic resonance of defects; radiation hardening (electronics); 100 Mrad; 200 Mrad; SIMOX; Si-SiO₂; charge compensation; deep electron trap; electron spin resonance; gamma irradiation; negatively charged centers; positively charged paramagnetic E´ centers; Charge carriers; Charge measurement; Current measurement; Electron traps; Hot carriers; NIST; Oxygen; Paramagnetic resonance; Silicon on insulator technology; Space charge;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.211410

Filename

211410