Title :
Anomalous radiation effect in p-channel MOSFET´s under electron irradiation
Author :
Newman, Phillip A. ; Wannemacher, Harry
Author_Institution :
NASA Goddard Space Flight Center, Greenbelt, Md.
fDate :
4/1/1967 12:00:00 AM
Abstract :
An anomalous shift in the gate threshold voltage of high-transconductance p-channel MOSFET´s has been observed during exposure to space-like radiation of 2 × 1012electrons/cm2that is two and one half to three times its saturation value at 2 × 1014electrons/cm2and is five to seven times its pre-irradiation value.
Keywords :
Current measurement; Diodes; Electrons; FETs; MOSFETs; Metal-insulator structures; Radiation effects; Softening; Threshold voltage; Voltage measurement;
Journal_Title :
Proceedings of the IEEE
DOI :
10.1109/PROC.1967.5588
