• DocumentCode
    889200
  • Title

    Film Properties of MoSi2 and Their Application to Self-Aligned MoSi2 Gate MOSFET

  • Author

    Mochizuki, Tohru ; Tsujimaru, Takaya ; Kashiwagi, Masahiro ; Nishi, Yoshio

  • Volume
    15
  • Issue
    4
  • fYear
    1980
  • fDate
    8/1/1980 12:00:00 AM
  • Firstpage
    496
  • Lastpage
    500
  • Abstract
    Molybdenum silicide (MoSi2) gate technology has been extensively investigated in conjunction with MOS device performance and reliability. Features of the MoSi2) gate technology are to realize a low resistivity of 1 X 10-4 Omega · cm for both gate and interconnection, and to give rise to higher reliability under both positive and negative bias stress of 2 MV/cm at 250°C. Problems on the ohmic contact between MoSi2 and single-crystal substrates are not completely solved yet, particularly when the device is processed at high temperature after MoSi2 deposition.
  • Keywords
    Etching; Insulated gate field effect transistors; Metallisation; Molybdenum compounds; Ohmic contacts; Oxidation; Annealing; Conductivity; Integrated circuit interconnections; MOSFET circuits; Semiconductor films; Silicides; Silicon; Sputtering; Substrates; Temperature;
  • fLanguage
    English
  • Journal_Title
    Solid-State Circuits, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9200
  • Type

    jour

  • DOI
    10.1109/JSSC.1980.1051428
  • Filename
    1051428
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=889200