DocumentCode :
889200
Title :
Film Properties of MoSi2 and Their Application to Self-Aligned MoSi2 Gate MOSFET
Author :
Mochizuki, Tohru ; Tsujimaru, Takaya ; Kashiwagi, Masahiro ; Nishi, Yoshio
Volume :
15
Issue :
4
fYear :
1980
fDate :
8/1/1980 12:00:00 AM
Firstpage :
496
Lastpage :
500
Abstract :
Molybdenum silicide (MoSi2) gate technology has been extensively investigated in conjunction with MOS device performance and reliability. Features of the MoSi2) gate technology are to realize a low resistivity of 1 X 10-4 Omega · cm for both gate and interconnection, and to give rise to higher reliability under both positive and negative bias stress of 2 MV/cm at 250°C. Problems on the ohmic contact between MoSi2 and single-crystal substrates are not completely solved yet, particularly when the device is processed at high temperature after MoSi2 deposition.
Keywords :
Etching; Insulated gate field effect transistors; Metallisation; Molybdenum compounds; Ohmic contacts; Oxidation; Annealing; Conductivity; Integrated circuit interconnections; MOSFET circuits; Semiconductor films; Silicides; Silicon; Sputtering; Substrates; Temperature;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/JSSC.1980.1051428
Filename :
1051428
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=889200
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