Effect of radiation-induced interface traps on 1/f noise in MOSFET´s

Author

Tsai, Ming-Horn ; Ma, Tso-Ping

Author_Institution

Dept. of Electr. Eng., Yale Univ., New Haven, CT, USA

Volume

39

Issue

6

fYear

1992

fDate

12/1/1992 12:00:00 AM

Firstpage

2178

Lastpage

2185

Abstract

By measuring the drain current fluctuations of X-ray irradiated and bias-annealed NMOSFETs in weak inversion over several decades of frequencies, it was demonstrated that, while the low-frequency 1/f noise is correlated with the density of oxide trapped charge (N_ot) as previously reported, the high-frequency 1/ f noise is correlated with the density of interface traps (D_it) but not with the oxide trapped charge. In contrast, 1/f noise measured in strong inversion does not seem to correlate with D_it because the measurement frequency is too low to distinguish the effect of interface traps close to the Si conduction band

Keywords

X-ray effects; annealing; current fluctuations; insulated gate field effect transistors; interface electron states; random noise; semiconductor device noise; semiconductor device testing; 1/f noise; NMOSFETs; X-ray irradiation; bias annealing; drain current fluctuations; interface traps; oxide trapped charge; radiation-induced interface traps; strong inversion; weak inversion; Annealing; Current measurement; Educational institutions; Fluctuations; Frequency measurement; Low-frequency noise; MOSFET circuits; Noise level; Noise measurement; Time measurement;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.211419

Filename

211419