Effect of radiation-induced interface traps on 1/f noise in MOSFET´s

By measuring the drain current fluctuations of X-ray irradiated and bias-annealed NMOSFETs in weak inversion over several decades of frequencies, it was demonstrated that, while the low-frequency 1/f noise is correlated with the density of oxide trapped charge (N_ot) as previously reported, the high-frequency 1/ f noise is correlated with the density of interface traps (D_it) but not with the oxide trapped charge. In contrast, 1/f noise measured in strong inversion does not seem to correlate with D_it because the measurement frequency is too low to distinguish the effect of interface traps close to the Si conduction band