DocumentCode :
889263
Title :
Frequency capability of strained AlAs/InGaAs resonant tunnelling diodes
Author :
Mounaix, P. ; Lheurette, E. ; Mollot, F. ; Lippens, D.
Author_Institution :
Inst. d´´Electron. et Microelectron. du Nord, Univ. des Sci. et Tech. de Lille Flandres Artois, Villeneuve d´´Ascq, France
Volume :
31
Issue :
17
fYear :
1995
fDate :
8/17/1995 12:00:00 AM
Firstpage :
1508
Lastpage :
1510
Abstract :
The frequency capabilities of integrated In0.53Ga0.47As/AlAs resonant tunnelling diodes have been investigated by successfully tracking their resistive cutoff frequencies when the samples are biased in the negative differential conductance region. The devices exhibit extremely high peak current density (Jp=175 kA cm2) and very low series resistance (6×10-7 Ωcm2) so that submillimetre wave operation can be expected
Keywords :
III-V semiconductors; aluminium compounds; current density; gallium arsenide; indium compounds; millimetre wave diodes; resonant tunnelling diodes; submillimetre wave diodes; EHF; In0.53Ga0.47As-AlAs; MM-wave diodes; THF; biased operation; current density; frequency capabilities; negative differential conductance region; resistive cutoff frequencies; resonant tunnelling diodes; series resistance; strained RTD; submillimetre wave operation;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19950960
Filename :
464094
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=889263
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