• DocumentCode
    889263
  • Title

    Frequency capability of strained AlAs/InGaAs resonant tunnelling diodes

  • Author

    Mounaix, P. ; Lheurette, E. ; Mollot, F. ; Lippens, D.

  • Author_Institution
    Inst. d´´Electron. et Microelectron. du Nord, Univ. des Sci. et Tech. de Lille Flandres Artois, Villeneuve d´´Ascq, France
  • Volume
    31
  • Issue
    17
  • fYear
    1995
  • fDate
    8/17/1995 12:00:00 AM
  • Firstpage
    1508
  • Lastpage
    1510
  • Abstract
    The frequency capabilities of integrated In0.53Ga0.47As/AlAs resonant tunnelling diodes have been investigated by successfully tracking their resistive cutoff frequencies when the samples are biased in the negative differential conductance region. The devices exhibit extremely high peak current density (Jp=175 kA cm2) and very low series resistance (6×10-7 Ωcm2) so that submillimetre wave operation can be expected
  • Keywords
    III-V semiconductors; aluminium compounds; current density; gallium arsenide; indium compounds; millimetre wave diodes; resonant tunnelling diodes; submillimetre wave diodes; EHF; In0.53Ga0.47As-AlAs; MM-wave diodes; THF; biased operation; current density; frequency capabilities; negative differential conductance region; resistive cutoff frequencies; resonant tunnelling diodes; series resistance; strained RTD; submillimetre wave operation;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19950960
  • Filename
    464094
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=889263