Quantitative Evaluation of Proximity Effect in Raster-Scan Exposure System for Electron-Beam Lithography

The proximity effect in a raster-scan for electron-beam lithography system was evaluated by Monte Carlo calculation and verified by experiments. It was revealed that the reduction in the beam diameter below the scanning pitch, which links into the shortening of drawing time, is more effective in decreasing the proximity effect than the reduction in the resist thickness. From the calculated results, it was found that the error in Iinewidth definition due to the proximity effect was less than 10 percent at a linewidth of 1.5μ m with scanning pitch of 0.5 μm, beam diameter of 0.2 μm, and PMMA resist of 1.0-μm thickness.