Title :
The time-dependence of post-irradiation interface trap build-up in deuterium-annealed oxides [n-MOSFET]
Author :
Saks, N.S. ; Rendell, R.W.
Author_Institution :
US Naval Res. Lab., Washington, DC, USA
fDate :
12/1/1992 12:00:00 AM
Abstract :
The time-dependent creation of interface traps Nit, in irradiated MOS devices has been studied in oxides which were annealed in either deuterium or hydrogen. It is found that the rate of Nit, buildup is significantly retarded in the deuterium-annealed oxides. It is noted that this result demonstrates conclusively that hydrogen must be involved in the Nit, creation process
Keywords :
annealing; electron beam effects; insulated gate field effect transistors; interface electron states; semiconductor device testing; D2 anealing; H2 annealing; MOS devices; Si-SiO2 interface; electron irradiation; n-channel MOSFET; post-irradiation interface trap build-up; time-dependence; Annealing; Bonding; Degradation; Deuterium; Electron traps; Hydrogen; Impurities; Ionizing radiation; Laboratories; MOS devices;
Journal_Title :
Nuclear Science, IEEE Transactions on
