• DocumentCode
    889283
  • Title

    The time-dependence of post-irradiation interface trap build-up in deuterium-annealed oxides [n-MOSFET]

  • Author

    Saks, N.S. ; Rendell, R.W.

  • Author_Institution
    US Naval Res. Lab., Washington, DC, USA
  • Volume
    39
  • Issue
    6
  • fYear
    1992
  • fDate
    12/1/1992 12:00:00 AM
  • Firstpage
    2220
  • Lastpage
    2229
  • Abstract
    The time-dependent creation of interface traps Nit, in irradiated MOS devices has been studied in oxides which were annealed in either deuterium or hydrogen. It is found that the rate of Nit, buildup is significantly retarded in the deuterium-annealed oxides. It is noted that this result demonstrates conclusively that hydrogen must be involved in the Nit, creation process
  • Keywords
    annealing; electron beam effects; insulated gate field effect transistors; interface electron states; semiconductor device testing; D2 anealing; H2 annealing; MOS devices; Si-SiO2 interface; electron irradiation; n-channel MOSFET; post-irradiation interface trap build-up; time-dependence; Annealing; Bonding; Degradation; Deuterium; Electron traps; Hydrogen; Impurities; Ionizing radiation; Laboratories; MOS devices;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/23.211424
  • Filename
    211424
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=889283