Initial hydrogen ion profiles during interface trap formation in MOS devices

Detailed predictions based on the H⁺ transport model for interface trap creation require knowledge of the initial (postirradiation) spatial distributions of H⁺ ions through the oxide. Proposed H⁺ distributions from the literature are evaluated by comparison of experimental data with calculations based on the model. It is found that the experimental data are consistent with creation of radiation-induced H⁺ ions both within the bulk of the oxide and preferentially in the vicinity of the SiO₂-Si interface (but not preferentially in the vicinity of the SiO₂-gate interface). The balance between bulk and near-interface H⁺ generation appears dependent on the device fabrication process