• DocumentCode
    889321
  • Title

    Improvement of radiation hardness due to aging of fluorinated and chlorinated SiO2/Si MOS capacitors

  • Author

    Wang, Xie-wen ; Wang, Yu ; Wang, Dechang ; Ma, Tso-Ping

  • Author_Institution
    Dept. of Electr. Eng., Yale Univ., New Haven, CT, USA
  • Volume
    39
  • Issue
    6
  • fYear
    1992
  • fDate
    12/1/1992 12:00:00 AM
  • Firstpage
    2252
  • Lastpage
    2256
  • Abstract
    The radiation hardness of MOS capacitors containing fluorinated or chlorinated SiO2 has been found to improve gradually when they are stored at room temperature for a long period of time after their fabrication before irradiation. This beneficial aging process can be accelerated by raising the storage temperature. No such aging effect has been observed in the control samples that do not contain F or Cl. A tentative explanation based on the gradual migration of F or Cl species and the formation of Si-F or Si-Cl bonds is proposed
  • Keywords
    X-ray effects; ageing; chlorine; fluorine; interface electron states; metal-insulator-semiconductor devices; radiation hardening (electronics); silicon; silicon compounds; MOS capacitors; Si-Cl bonds; Si-F bonds; SiO2:Cl-Si; SiO2:F-Si; X-ray irradiation; aging; interface trap distribution; radiation hardness; storage temperature; Acceleration; Aging; Annealing; Fabrication; Hafnium; Ion implantation; MOS capacitors; Microelectronics; Oxidation; Temperature;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/23.211428
  • Filename
    211428
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=889321