Title :
MOS transistors with anodically formed metal oxides as gate insulators
Author :
Witt, William ; Huber, F. ; Delivorias, P.
fDate :
5/1/1967 12:00:00 AM
Abstract :
A new type of MOS field effect transistor has been fabricated utilizing anodically formed valve metal oxide films (AMOS). These anodic oxide films such as hafnium dioxide (HfMOS) offer the advantage of producing high dielectric constant insulators in the channel in order to improve the transconductance (gm) and voltage gain (µA= Cin/Cfb) of the device.
Keywords :
Dielectrics and electrical insulation; FETs; Hafnium; High-K gate dielectrics; MOSFETs; Metal-insulator structures; Oxidation; Silicon; Temperature; Valves;
Journal_Title :
Proceedings of the IEEE
DOI :
10.1109/PROC.1967.5633
