DocumentCode :
889618
Title :
A Large Area TDI Image Sensor for Low Light Level Imaging
Author :
Farrier, Michael G. ; Dyck, Rudolph H.
Volume :
15
Issue :
4
fYear :
1980
Firstpage :
753
Lastpage :
758
Abstract :
A 1030 X 128 element time delay and integration (TDI) CCD image sensor has been developed for low-light-level (L/sup 3/) imaging applications. For L/sup 3/ imaging, output is derived from a high-gain low-noise floating-gate amplifier (FGA). For larger input signal levels, a second, resettable floating-gate amplifier (RFGA) with lower gain and wider dynamic range provides output in parallel to the FGA. The device features four-phase buried-channel construction and a polysilicon gate design tailored to produce optimum broad-band responsivity. Input signal levels of 500 electrons have been successfully imaged and amplifier noise levels of approximately 20 electrons have been observed.
Keywords :
Charge-coupled device circuits; Image sensors; Cameras; Charge-coupled image sensors; Delay effects; Dynamic range; Electrons; High-resolution imaging; Image sensors; Lighting; Semiconductor device measurement; Sensor arrays;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/JSSC.1980.1051465
Filename :
1051465
Link To Document :
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