Title :
Analytical modeling of a high-performance near-ballistic uni-traveling-carrier photodiode at a 1.55-μm wavelength
Author :
Wu, Y.-S. ; Shi, J.-W. ; Chiu, P.-H.
Author_Institution :
Dept. of Electr. Eng., Nat. Central Univ., Taoyuan, Taiwan
fDate :
4/1/2006 12:00:00 AM
Abstract :
We developed an analytical equivalent circuit model, which includes the resistance-capacitance-delay time and carrier transport time, to investigate the distinct dynamic performance of the near-ballistic uni-traveling-carrier photodiode (NBUTC-PD). This device, in which the structure of the collector of the UTC-PD is modified, can achieve excellent performance at a 1.55-μm wavelength. According to the measured frequency responses of the scattering (S) parameters of NBUTC-PD and detailed device-modeling, the observed significant reduction of the device capacitance and the enhancement of the net optical-to-electrical bandwidth under high-power operation can be attributed to the unique near-ballistic-transport property of the photogenerated electron, which has never been observed in the traditional high-speed high-power photodiode.
Keywords :
ballistic transport; photodiodes; semiconductor device models; 1.55 mum; carrier transport time; device capacitance; equivalent circuit model; frequency responses; high-power operation; high-power photodiode; high-speed photodiode; near-ballistic transport theory; near-ballistic unitravelling-carrier photodiode; optical-to-electrical bandwidth; photogenerated electron; resistance-capacitance-delay time; scattering parameters; Analytical models; Capacitance measurement; Circuit analysis; Electrical resistance measurement; Equivalent circuits; Frequency measurement; Optical scattering; Performance analysis; Photodiodes; Wavelength measurement; Equivalent-circuit model; high-power photodiode; optical receivers; photodiode;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2006.873567
