• DocumentCode
    889749
  • Title

    Static RAMs with microwatt data retention capability

  • Author

    Dumbri, Austin C. ; Rosenzweig, Walter

  • Volume
    15
  • Issue
    5
  • fYear
    1980
  • fDate
    10/1/1980 12:00:00 AM
  • Firstpage
    826
  • Lastpage
    831
  • Abstract
    Static RAMs using undoped polysilicon load resistor cells can retain data at less than a nanowatt/bit. This allows large memories to be designed for low-power battery backup applications provided 1) all peripheral circuits can be powered down without disturbing the stored data, and 2) subthreshold leakages of `off´ transistors in the memory are at an adequately low level to maintain the stored data during battery backup. Novel circuitry has been developed which assures both conditions without compromising performance. These circuits have been used successfully in 4K and 16K static RAMs, with typical power dissipations of 5 and 12 μW, respectively. Data are retained in battery backup over a temperature range in excess of the specified 0-100°C, even with rapid skewing of the power supply voltage.
  • Keywords
    Integrated memory circuits; Random-access storage; integrated memory circuits; random-access storage; Batteries; Circuits; Emergency power supplies; Energy consumption; Power dissipation; Random access memory; Resistors; SRAM chips; Subthreshold current; Temperature distribution;
  • fLanguage
    English
  • Journal_Title
    Solid-State Circuits, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9200
  • Type

    jour

  • DOI
    10.1109/JSSC.1980.1051478
  • Filename
    1051478