DocumentCode
889749
Title
Static RAMs with microwatt data retention capability
Author
Dumbri, Austin C. ; Rosenzweig, Walter
Volume
15
Issue
5
fYear
1980
fDate
10/1/1980 12:00:00 AM
Firstpage
826
Lastpage
831
Abstract
Static RAMs using undoped polysilicon load resistor cells can retain data at less than a nanowatt/bit. This allows large memories to be designed for low-power battery backup applications provided 1) all peripheral circuits can be powered down without disturbing the stored data, and 2) subthreshold leakages of `off´ transistors in the memory are at an adequately low level to maintain the stored data during battery backup. Novel circuitry has been developed which assures both conditions without compromising performance. These circuits have been used successfully in 4K and 16K static RAMs, with typical power dissipations of 5 and 12 μW, respectively. Data are retained in battery backup over a temperature range in excess of the specified 0-100°C, even with rapid skewing of the power supply voltage.
Keywords
Integrated memory circuits; Random-access storage; integrated memory circuits; random-access storage; Batteries; Circuits; Emergency power supplies; Energy consumption; Power dissipation; Random access memory; Resistors; SRAM chips; Subthreshold current; Temperature distribution;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/JSSC.1980.1051478
Filename
1051478
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