Title :
A bonding technique for thin GaAs dice with via holes using gold-tin composites
Author :
Wang, Chen Y. ; Lee, Chin C.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Irvine, CA, USA
fDate :
12/1/1991 12:00:00 AM
Abstract :
100 μm thin 2-mm-by-3-mm GaAs dice with via holes have been successfully bonded on alumina substrates using the technique of gold-tin multilayer composite. The bondings are near perfect, as confirmed by a scanning acoustic microscope. Scanning electron microscope images of cross sections reveal that the bonding layers are very uniform and the thickness is 1.5 μm. EDX analysis shows that the composition of the bonding layer is nearly gold-tin eutectic. No die crackings were observed after the bonding. The specimens underwent 40 cycles of thermal shock test between -196°C and 160°C without incurring bonding degradation and die cracking
Keywords :
III-V semiconductors; alumina; gallium arsenide; gold alloys; microassembling; packaging; substrates; tin alloys; -106 to 160 C; 100 micron; 2 mm; 3 mm; Al2O3 substrates; Au-Sn alloys; EDX analysis; bonding layers; bonding technique; cross sections; multilayer composite; scanning acoustic microscopy; semiconductors; thermal shock test; thin GaAs dice; via holes; Bonding; Chromium; Electric shock; Gallium arsenide; Gold alloys; Packaging; Preforms; Scanning electron microscopy; Substrates; Tin;
Journal_Title :
Components, Hybrids, and Manufacturing Technology, IEEE Transactions on
