A bonding technique for thin GaAs dice with via holes using gold-tin composites

Author

Wang, Chen Y. ; Lee, Chin C.

Author_Institution

Dept. of Electr. & Comput. Eng., California Univ., Irvine, CA, USA

Volume

14

Issue

4

fYear

1991

fDate

12/1/1991 12:00:00 AM

Firstpage

874

Lastpage

878

Abstract

100 μm thin 2-mm-by-3-mm GaAs dice with via holes have been successfully bonded on alumina substrates using the technique of gold-tin multilayer composite. The bondings are near perfect, as confirmed by a scanning acoustic microscope. Scanning electron microscope images of cross sections reveal that the bonding layers are very uniform and the thickness is 1.5 μm. EDX analysis shows that the composition of the bonding layer is nearly gold-tin eutectic. No die crackings were observed after the bonding. The specimens underwent 40 cycles of thermal shock test between -196°C and 160°C without incurring bonding degradation and die cracking

Keywords

III-V semiconductors; alumina; gallium arsenide; gold alloys; microassembling; packaging; substrates; tin alloys; -106 to 160 C; 100 micron; 2 mm; 3 mm; Al₂O₃ substrates; Au-Sn alloys; EDX analysis; bonding layers; bonding technique; cross sections; multilayer composite; scanning acoustic microscopy; semiconductors; thermal shock test; thin GaAs dice; via holes; Bonding; Chromium; Electric shock; Gallium arsenide; Gold alloys; Packaging; Preforms; Scanning electron microscopy; Substrates; Tin;

fLanguage

English

Journal_Title

Components, Hybrids, and Manufacturing Technology, IEEE Transactions on

Publisher

ieee

ISSN

0148-6411

Type

jour

DOI

10.1109/33.105148

Filename

105148