Title :
Comparative logic figure of merit of current high-speed transistors
Author :
Giacoletto, L.J.
Abstract :
A logic figure of merit is used for the comparative measure of speed of three transistors that represent current technology applied to high-speed transistors. An indium phosphide Schottky-barrier field-effect transistor with a channel length of 1 /spl mu/m has T/SUB FM/=69.2 ps. A gallium arsenide field-effect transistor of essentially the same geometry has T/SUB FM/=80.7 ps. A silicon bipolar transistor with an active base-width of 0.08 /spl mu/m and 5/spl times/0.4 emitter stripes has T/SUB FM/=113.8 ps with package included and T/SUB FM/=65.2 ps for chip only.
Keywords :
Bipolar transistors; Logic devices; Schottky gate field effect transistors; bipolar transistors; logic devices; Bipolar transistors; Current measurement; FETs; Gallium arsenide; Geometry; Indium phosphide; Logic; Packaging; Silicon; Velocity measurement;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1980.1051491
