DocumentCode :
889923
Title :
Linear millimeter wave amplification with GaAs wafers
Author :
Thim, H.W.
Volume :
55
Issue :
5
fYear :
1967
fDate :
5/1/1967 12:00:00 AM
Firstpage :
718
Lastpage :
719
Abstract :
Linear amplification in the 20 to 60 GHz range has been obtained using n-GaAs samples 5 microns thick. Gain was exhibited over several GHz and saturation occurred when the output power level reached 1 mW. The oscillatory power output was between 7 and 20 mW.
Keywords :
Directional couplers; Doping; Dynamic range; Electrons; Frequency; Gallium arsenide; Heating; Power generation; Reflection; Tunable circuits and devices;
fLanguage :
English
Journal_Title :
Proceedings of the IEEE
Publisher :
ieee
ISSN :
0018-9219
Type :
jour
DOI :
10.1109/PROC.1967.5662
Filename :
1447592
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=889923
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