Title :
Electron beam recording in SiO2with direct read-out using the electron beam induced current at a p-n junction
fDate :
5/1/1967 12:00:00 AM
Abstract :
A method is briefly described for direct read-out of information written in SiO2films by a finely focused scanning electron beam. The technique utilizes the electron beam induced current collected at a p-n junction. Preliminary results are presented and discussed.
Keywords :
Costs; Displays; Electron beams; Optical films; P-n junctions; Read-write memory; Scanning electron microscopy; Semiconductor films; Substrates; Writing;
Journal_Title :
Proceedings of the IEEE
DOI :
10.1109/PROC.1967.5671