DocumentCode :
890031
Title :
Electron beam recording in SiO2with direct read-out using the electron beam induced current at a p-n junction
Author :
Varker, C.J.
Volume :
55
Issue :
5
fYear :
1967
fDate :
5/1/1967 12:00:00 AM
Firstpage :
728
Lastpage :
729
Abstract :
A method is briefly described for direct read-out of information written in SiO2films by a finely focused scanning electron beam. The technique utilizes the electron beam induced current collected at a p-n junction. Preliminary results are presented and discussed.
Keywords :
Costs; Displays; Electron beams; Optical films; P-n junctions; Read-write memory; Scanning electron microscopy; Semiconductor films; Substrates; Writing;
fLanguage :
English
Journal_Title :
Proceedings of the IEEE
Publisher :
ieee
ISSN :
0018-9219
Type :
jour
DOI :
10.1109/PROC.1967.5671
Filename :
1447601
Link To Document :
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