• DocumentCode
    890031
  • Title

    Electron beam recording in SiO2with direct read-out using the electron beam induced current at a p-n junction

  • Author

    Varker, C.J.

  • Volume
    55
  • Issue
    5
  • fYear
    1967
  • fDate
    5/1/1967 12:00:00 AM
  • Firstpage
    728
  • Lastpage
    729
  • Abstract
    A method is briefly described for direct read-out of information written in SiO2films by a finely focused scanning electron beam. The technique utilizes the electron beam induced current collected at a p-n junction. Preliminary results are presented and discussed.
  • Keywords
    Costs; Displays; Electron beams; Optical films; P-n junctions; Read-write memory; Scanning electron microscopy; Semiconductor films; Substrates; Writing;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IEEE
  • Publisher
    ieee
  • ISSN
    0018-9219
  • Type

    jour

  • DOI
    10.1109/PROC.1967.5671
  • Filename
    1447601
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=890031